c-1 www.irf.com IRG4PH50K short circuit rated ultrafast igbt insulated gate bipolar transistor pd - 9.1576 v ces = 1200v v ce(on) typ. = 2.77v @v ge = 15v, i c = 24a e c g n-channel features benefits l high short circuit rating optimized for motor control, t sc =10s, v cc = 720v, t j = 125c, v ge = 15v l combines low conduction losses with high switching speed l latest generation design provides tighter parameter distribution and higher efficiency than previous generations l as a freewheeling diode we recommend our hexfred tm ultrafast, ultrasoft recovery diodes for minimum emi/noise and switching losses in the diode and igbt l latest generation 4 igbts offer highest power density motor controls possible l this part replaces the irgph50k and irgph50m devices to-247 ab absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 45 i c @ t c = 100c continuous collector current 24 a i cm pulsed collector current 90 i lm clamped inductive load current 90 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy a 190 mj p d @ t c = 25c maximum power dissipation 200 w p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) parameter typ. max. units r q jc junction-to-case 0.64 r q cs case-to-sink, flat, greased surface 0.24 c/w r q ja junction-to-ambient, typical socket mount 40 wt weight 6 (0.21) g (oz) thermal resistance
IRG4PH50K c-2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 180 270 i c = 24a q ge gate - emitter charge (turn-on) 25 38 nc v cc = 400v see figure 8 q gc gate - collector charge (turn-on) 70 110 v ge = 15v t d(on) turn-on delay time 36 t r rise time 27 t j = 25c t d(off) turn-off delay time 200 300 i c = 24a, v cc = 960v t f fall time 130 190 v ge = 15v, r g = 5.0 w e on turn-on switching loss 1.21 energy losses include "tail" e off turn-off switching loss 2.25 mj see figures 9,10,14 e ts total switching loss 3.46 4.1 t sc short circuit withstand time 10 s v cc = 720v, t j = 125c v ge = 15v, r g = 5.0 w t d(on) turn-on delay time 35 t j = 150c, t r rise time 29 i c = 24a, v cc = 960v t d(off) turn-off delay time 380 v ge = 15v, r g = 5.0 w t f fall time 280 energy losses include "tail" e ts total switching loss 7.80 mj see figures 10,11,14 l e internal emitter inductance 13 nh measured 5mm from package c ies input capacitance 2800 v ge = 0v c oes output capacitance 140 pf v cc = 30v see figure 7 c res reverse transfer capacitance 53 ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.91 v/c v ge = 0v, i c = 2.0ma 2.77 3.5 i c = 24a v ge = 15v v ce(on) collector-to-emitter saturation voltage 3.28 i c = 45a see figures 2, 5 2.54 i c = 24a , t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -10 mv/c v ce = v ge , i c = 2.0ma g fe forward transconductance 13 19 s v ce = 100 v, i c = 24a 250 v ge = 0v, v ce = 1200v 2.0 v ge = 0v, v ce = 10v, t j = 25c 5000 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns a repetitive rating; pulse width limited by maximum junction temperature. ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited bymax. junction temperature. (see figure 13b) v cc = 80% (v ces ), v ge = 20v, l = 10h, r g = 5.0 w , (see figure 13a)
IRG4PH50K c-3 www.irf.com fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 5 6 7 8 9 10 11 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 0 10 20 30 40 50 60 0.1 1 10 100 f, fre q uenc y ( khz ) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power d issipation = 40w triangular wave: clamp voltage: 80% of rated load current ( a )
IRG4PH50K c-4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.5 2.0 2.5 3.0 3.5 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 48 c i = a 24 c i = a 12 c
IRG4PH50K c-5 www.irf.com fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 24a cc c 0 10 20 30 40 50 3.0 4.0 5.0 6.0 7.0 total switching losses (mj) v = 960v v = 15v t = 25 c i = 24a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 960v g ge cc i = a 48 c i = a 24 c i = a 12 c 5.0 w 1 10 100 0 1000 2000 3000 4000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res r g , gate resistance ( w )
IRG4PH50K c-6 www.irf.com 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 0 10 20 30 40 50 0 5 10 15 20 25 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 960v v = 15v g j cc ge 5.0 w
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